Infineon IQE Type N-Channel MOSFET, 205 A, 40 V Enhancement, 8-Pin WHSON
- RS stock no.:
- 260-1078
- Mfr. Part No.:
- IQE013N04LM6SCATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 6000 units)*
R 119 706,00
(exc. VAT)
R 137 664,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 6000 - 6000 | R 19.951 | R 119,706.00 |
| 12000 - 12000 | R 19.452 | R 116,712.00 |
| 18000 + | R 18.868 | R 113,208.00 |
*price indicative
- RS stock no.:
- 260-1078
- Mfr. Part No.:
- IQE013N04LM6SCATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQE | |
| Package Type | WHSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQE | ||
Package Type WHSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFETs allows the source potential to be connected to the PCB over the thermal pad which offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. It also have the reduced active cooling requirements and the effective layout for thermal management which are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
Superior thermal performance
Optimized layout possibilities
Related links
- Infineon N-Channel MOSFET 40 V, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon N-Channel MOSFET 40 V, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- Infineon N-Channel MOSFET 40 V PG-TTFN IQE013N04LM6CGATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin WHSON IQE006NE2LM5SCATMA1
- Diodes Inc DMT61M8SPS N-Channel MOSFET 60 V, 8-Pin PowerDI5060-8 DMT61M8SPS-13
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin TDSON BSC014N04LSTATMA1
- Infineon N-Channel MOSFET, 205 A PG-TSON IQE013N04LM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1