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Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5ATMA1

RS stock no.:: 240-6632
Mfr. Part No.:: IQE030N06NM5ATMA1
Manufacturer:: Infineon

Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5ATMA1

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 102,64

(exc. VAT)

R 118,04

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 428 unit(s) shipping from 31 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	R 51.32	R 102.64
10 - 98	R 50.035	R 100.07
100 - 248	R 48.535	R 97.07
250 - 498	R 46.595	R 93.19
500 +	R 44.73	R 89.46

*price indicative

RS stock no.:: 240-6632
Mfr. Part No.:: IQE030N06NM5ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	253A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PQFN
	Series	IQE
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.85mΩ
	Forward Voltage Vf	0.73V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 253A
	Maximum Drain Source Voltage Vds 30V
	Package Type PQFN
	Series IQE
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.85mΩ
	Forward Voltage Vf 0.73V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IQE030N06NM5ATMA1

The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5ATMA1

FREE delivery for orders over R 1,500.00

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