Infineon IPT Type N-Channel MOSFET, 408 A, 80 V, 16-Pin HDSOP

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Subtotal (1 reel of 1800 units)*

R 115 884,00

(exc. VAT)

R 133 272,00

(inc. VAT)

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Units
Per unit
Per Reel*
1800 - 1800R 64.38R 115,884.00
3600 - 3600R 62.771R 112,987.80
5400 +R 60.888R 109,598.40

*price indicative

RS stock no.:
259-2728
Mfr. Part No.:
IPTC011N08NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

408A

Maximum Drain Source Voltage Vds

80V

Package Type

HDSOP

Series

IPT

Pin Count

16

Maximum Drain Source Resistance Rds

1.1mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

0.88V

Typical Gate Charge Qg @ Vgs

178nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-23

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