Infineon IPT Type N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1
- RS stock no.:
- 258-3903
- Mfr. Part No.:
- IPT019N08N5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 34,72
(exc. VAT)
R 39,93
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,745 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | R 34.72 |
| 10 - 99 | R 33.85 |
| 100 - 249 | R 32.83 |
| 250 - 499 | R 31.52 |
| 500 + | R 30.26 |
*price indicative
- RS stock no.:
- 258-3903
- Mfr. Part No.:
- IPT019N08N5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 247A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IPT | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 247A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IPT | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V n-channel power MOSFET in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles, POL and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-leadless is the perfect solution where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
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