Infineon IPT Type N-Channel MOSFET, 297 A, 135 V Enhancement, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- RS stock no.:
- 349-133
- Mfr. Part No.:
- IPTC020N13NM6ATMA1
- Manufacturer:
- Infineon
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R 189,40
(exc. VAT)
R 217,81
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 189.40 |
| 10 - 99 | R 184.67 |
| 100 - 499 | R 179.13 |
| 500 - 999 | R 171.96 |
| 1000 + | R 165.08 |
*price indicative
- RS stock no.:
- 349-133
- Mfr. Part No.:
- IPTC020N13NM6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOF-16 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOF-16 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high performance power applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and enhancing efficiency. The MOSFET features an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts a very low reverse recovery charge (Qrr), optimizing efficiency during switching events. With a high avalanche energy rating, it ensures reliability under demanding conditions and operates effectively at 175°C, making it ideal for high temperature environments.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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