Infineon iPB Type N-Channel MOSFET, 180 A, 60 V N TO-263 IPB014N06NATMA1

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Subtotal (1 pack of 2 units)*

R 135,91

(exc. VAT)

R 156,296

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 67.955R 135.91
50 - 98R 66.255R 132.51
100 - 248R 64.265R 128.53
250 - 498R 61.695R 123.39
500 +R 59.225R 118.45

*price indicative

Packaging Options:
RS stock no.:
259-1541
Mfr. Part No.:
IPB014N06NATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Channel Mode

N

Standards/Approvals

No

Automotive Standard

No

The Infineon optimos 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. Available in half bridge configuration (power stage 5x6).

N-channel enhancement mode

AEC qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green product (RoHS compliant)

Ultra low Rds(on)

100% avalanche tested

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