Infineon iPB Type N-Channel MOSFET, 211 A, 650 V N TO-263

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Subtotal (1 reel of 1000 units)*

R 60 432,00

(exc. VAT)

R 69 497,00

(inc. VAT)

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Temporarily out of stock
  • Shipping from 09 November 2026
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Units
Per unit
Per Reel*
1000 - 1000R 60.432R 60,432.00
2000 - 2000R 58.921R 58,921.00
3000 +R 57.154R 57,154.00

*price indicative

RS stock no.:
258-3826
Mfr. Part No.:
IPBE65R050CFD7AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

211A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

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