Infineon iPB Type N-Channel MOSFET, 11 A, 600 V N TO-263 IPB60R299CPAATMA1

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Subtotal (1 unit)*

R 59,79

(exc. VAT)

R 68,76

(inc. VAT)

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Per unit
1 - 9R 59.79
10 - 99R 58.30
100 - 249R 56.55
250 - 499R 54.29
500 +R 52.12

*price indicative

Packaging Options:
RS stock no.:
258-3809
Mfr. Part No.:
IPB60R299CPAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS power transistor is high peak current capability, its automotive AEC Q101 qualified.

Ultra low gate charge

Extreme dv/dt rated

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