Infineon HEXFET N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

R 59 772,00

(exc. VAT)

R 68 736,00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000R 14.943R 59,772.00
8000 - 8000R 14.57R 58,280.00
12000 +R 14.133R 56,532.00

*price indicative

RS stock no.:
258-3971
Mfr. Part No.:
IRFH8303TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Width

5mm

Height

900μm

Length

6mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

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