Name: Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN
Brand: Infineon
SKU: 258-3971
Price: 17.96 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	280A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.7mΩ
	Maximum Power Dissipation Pd	156W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	58nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	0.9mm
	Width	5 mm
	Length	6mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 280A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.7mΩ
	Maximum Power Dissipation Pd 156W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 58nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 0.9mm
	Width 5 mm
	Length 6mm
	Automotive Standard No

Datasheet - IRFH8303TRPBF

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

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