Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF

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Subtotal (1 pack of 5 units)*

R 66,59

(exc. VAT)

R 76,58

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 13.318R 66.59
50 - 95R 12.986R 64.93
100 - 495R 12.596R 62.98
500 - 1995R 12.092R 60.46
2000 +R 11.608R 58.04

*price indicative

Packaging Options:
RS stock no.:
257-5887
Mfr. Part No.:
IRFH5301TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.85mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Length

6mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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