Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN
- RS stock no.:
- 217-2614
- Mfr. Part No.:
- IRFH8334TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 4000 units)*
R 13 240,00
(exc. VAT)
R 15 240,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | R 3.31 | R 13,240.00 |
| 8000 - 8000 | R 3.227 | R 12,908.00 |
| 12000 + | R 3.13 | R 12,520.00 |
*price indicative
- RS stock no.:
- 217-2614
- Mfr. Part No.:
- IRFH8334TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.17mm | |
| Length | 6.02mm | |
| Standards/Approvals | RoHS | |
| Width | 4.98 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 3.2W | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.17mm | ||
Length 6.02mm | ||
Standards/Approvals RoHS | ||
Width 4.98 mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate-drive voltage (called Logic level)
Industry standard surface-mount power package
Related links
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin PQFN 5 x 6 IRFH8334TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 8-Pin PQFN 5 x 6 IRFH5015TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin PQFN 5 x 6 IRFH8325TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 8-Pin PQFN 5 x 6 IRFH5006TRPBF
- Infineon HEXFET N-Channel MOSFET 25 V, 8-Pin PQFN 5 x 6 IRFH5250DTRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 5 x 6 AUIRFN8459TR
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 8-Pin PQFN 5 x 6 IRFH7932TRPBF