Infineon IPD Type P-Channel MOSFET, 70 A, 30 V N TO-252 IPD068P03L3GATMA1

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Subtotal (1 pack of 5 units)*

R 72,17

(exc. VAT)

R 82,995

(inc. VAT)

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  • 1,645 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5R 14.434R 72.17
10 - 95R 14.074R 70.37
100 - 245R 13.652R 68.26
250 - 495R 13.106R 65.53
500 +R 12.582R 62.91

*price indicative

Packaging Options:
RS stock no.:
258-3831
Mfr. Part No.:
IPD068P03L3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon P-channel enhancement mode field-effect transistor is highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated


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