Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD650P06NMATMA1
- RS stock no.:
- 244-0880
- Mfr. Part No.:
- IPD650P06NMATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
R 56,82
(exc. VAT)
R 65,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,162 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 28.41 | R 56.82 |
| 10 - 98 | R 27.70 | R 55.40 |
| 100 - 248 | R 26.87 | R 53.74 |
| 250 - 498 | R 25.795 | R 51.59 |
| 500 + | R 24.765 | R 49.53 |
*price indicative
- RS stock no.:
- 244-0880
- Mfr. Part No.:
- IPD650P06NMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.
P-Channel
Very low on-resistance RDS(on)
100% avalanche tested
Normal Level
Enhancement mode
Related links
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