Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD650P06NMATMA1

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Subtotal (1 pack of 2 units)*

R 60,31

(exc. VAT)

R 69,356

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 30.155R 60.31
10 - 98R 29.40R 58.80
100 - 248R 28.52R 57.04
250 - 498R 27.38R 54.76
500 +R 26.285R 52.57

*price indicative

Packaging Options:
RS stock no.:
244-0880
Mfr. Part No.:
IPD650P06NMATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

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