Infineon IPD Type P-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD25DP06LMATMA1
- RS stock no.:
- 244-1590
- Mfr. Part No.:
- IPD25DP06LMATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 131,50
(exc. VAT)
R 151,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,120 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 26.30 | R 131.50 |
| 10 - 95 | R 25.642 | R 128.21 |
| 100 - 245 | R 24.872 | R 124.36 |
| 250 - 495 | R 23.878 | R 119.39 |
| 500 + | R 22.922 | R 114.61 |
*price indicative
- RS stock no.:
- 244-1590
- Mfr. Part No.:
- IPD25DP06LMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.
P-Channel
Very low on-resistance RDS(on)
100% avalanche tested
Normal Level
Enhancement mode
Related links
- Infineon IPD Type P-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 100 V N, 3-Pin TO-252 IPD650P06NMATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1
- Infineon IPD Type P-Channel MOSFET 75 V P, 3-Pin TO-252