Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L04ATMA2

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Subtotal (1 pack of 2 units)*

R 131,75

(exc. VAT)

R 151,512

(inc. VAT)

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  • 998 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 65.875R 131.75
10 - 98R 64.23R 128.46
100 - 248R 62.305R 124.61
250 - 498R 59.815R 119.63
500 +R 57.42R 114.84

*price indicative

Packaging Options:
RS stock no.:
258-3818
Mfr. Part No.:
IPB80P04P4L04ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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