Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L04ATMA2

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Subtotal (1 pack of 2 units)*

R 112,41

(exc. VAT)

R 129,272

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 56.205R 112.41
10 - 98R 54.80R 109.60
100 - 248R 53.155R 106.31
250 - 498R 51.03R 102.06
500 +R 48.99R 97.98

*price indicative

Packaging Options:
RS stock no.:
258-3818
Mfr. Part No.:
IPB80P04P4L04ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability

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