Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P407ATMA2

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Subtotal (1 pack of 2 units)*

R 106,61

(exc. VAT)

R 122,602

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Last RS stock
  • Final 970 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8R 53.305R 106.61
10 - 98R 51.97R 103.94
100 - 248R 50.41R 100.82
250 - 498R 48.395R 96.79
500 +R 46.46R 92.92

*price indicative

Packaging Options:
RS stock no.:
258-3815
Mfr. Part No.:
IPB80P04P407ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

Green package (RoHS compliant)

100% Avalanche tested

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