Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L06ATMA2

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Subtotal (1 pack of 2 units)*

R 71,71

(exc. VAT)

R 82,466

(inc. VAT)

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Last RS stock
  • Final 76 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8R 35.855R 71.71
10 - 98R 34.96R 69.92
100 - 248R 33.91R 67.82
250 - 498R 32.555R 65.11
500 +R 31.255R 62.51

*price indicative

Packaging Options:
RS stock no.:
258-3820
Mfr. Part No.:
IPB80P04P4L06ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel logic level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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