Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L06ATMA2

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Subtotal (1 pack of 2 units)*

R 88,97

(exc. VAT)

R 102,316

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Last RS stock
  • Final 74 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8R 44.485R 88.97
10 - 98R 43.375R 86.75
100 - 248R 42.075R 84.15
250 - 498R 40.39R 80.78
500 +R 38.775R 77.55

*price indicative

Packaging Options:
RS stock no.:
258-3820
Mfr. Part No.:
IPB80P04P4L06ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel logic level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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