Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L06ATMA2

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Subtotal (1 pack of 2 units)*

R 87,02

(exc. VAT)

R 100,08

(inc. VAT)

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Last RS stock
  • Final 74 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
2 - 8R 43.51R 87.02
10 - 98R 42.42R 84.84
100 - 248R 41.145R 82.29
250 - 498R 39.50R 79.00
500 +R 37.92R 75.84

*price indicative

Packaging Options:
RS stock no.:
258-3820
Mfr. Part No.:
IPB80P04P4L06ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel logic level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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