Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263
- RS stock no.:
- 258-3814
- Mfr. Part No.:
- IPB80P04P407ATMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 1000 units)*
R 19 445,00
(exc. VAT)
R 22 362,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 19.445 | R 19,445.00 |
| 2000 - 2000 | R 18.959 | R 18,959.00 |
| 3000 + | R 18.39 | R 18,390.00 |
*price indicative
- RS stock no.:
- 258-3814
- Mfr. Part No.:
- IPB80P04P407ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 40.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 40.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.
Green package (RoHS compliant)
100% Avalanche tested
Related links
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