Infineon BSC N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

R 69 375,00

(exc. VAT)

R 79 780,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 13.875R 69,375.00
10000 - 10000R 13.528R 67,640.00
15000 +R 13.122R 65,610.00

*price indicative

RS stock no.:
258-0696
Mfr. Part No.:
BSC120N12LSGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

120V

Series

BSC

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

870mV

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

114W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS

Width

6.35mm

Length

5.49mm

Height

1.1mm

Automotive Standard

No

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge

Lower output charge

Logic level compatibility

Higher power density designs

Higher switching frequency

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