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Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

RS stock no.:: 258-0697
Mfr. Part No.:: BSC120N12LSGATMA1
Manufacturer:: Infineon

Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 64,96

(exc. VAT)

R 74,70

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 4,974 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
2 - 8	R 32.48	R 64.96
10 - 98	R 31.67	R 63.34
100 - 248	R 30.72	R 61.44
250 - 498	R 29.49	R 58.98
500 +	R 28.31	R 56.62

*price indicative

RS stock no.:: 258-0697
Mfr. Part No.:: BSC120N12LSGATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	120V
	Package Type	TDSON
	Series	BSC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	14.2mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	114W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.87V
	Maximum Operating Temperature	150°C
	Length	5.49mm
	Width	6.35 mm
	Height	1.1mm
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 120V
	Package Type TDSON
	Series BSC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 14.2mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 114W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.87V
	Maximum Operating Temperature 150°C
	Length 5.49mm
	Width 6.35 mm
	Height 1.1mm
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSC120N12LSGATMA1

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge

Lower output charge

Logic level compatibility

Higher power density designs

Higher switching frequency

Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON BSC120N12LSGATMA1

FREE delivery for orders over R 1,500.00

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