Infineon BSC Type N-Channel MOSFET, 100 A, 75 V N, 8-Pin TDSON BSC036NE7NS3GATMA1
- RS stock no.:
- 259-1471
- Mfr. Part No.:
- BSC036NE7NS3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 40,07
(exc. VAT)
R 46,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,700 unit(s) shipping from 20 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 20.035 | R 40.07 |
| 50 - 498 | R 19.535 | R 39.07 |
| 500 - 998 | R 18.95 | R 37.90 |
| 1000 - 2498 | R 18.19 | R 36.38 |
| 2500 + | R 17.46 | R 34.92 |
*price indicative
- RS stock no.:
- 259-1471
- Mfr. Part No.:
- BSC036NE7NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TDSON | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Length | 6.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TDSON | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Length 6.35mm | ||
Automotive Standard No | ||
The Infineon 75V optimos technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.
Optimized technology for synchronous rectification
Best switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant halogen free
MSL3 rated
Related links
- Infineon BSC Type N-Channel MOSFET 75 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 40 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 120 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 60 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 25 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 30 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 30 V N, 8-Pin TDSON
- Infineon BSC Type N-Channel MOSFET 60 V N, 8-Pin TDSON