Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-263 IRFS7540TRLPBF

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Subtotal (1 pack of 5 units)*

R 180,32

(exc. VAT)

R 207,37

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 36.064R 180.32
25 - 45R 35.162R 175.81
50 - 95R 34.108R 170.54
100 - 245R 32.744R 163.72
250 +R 31.434R 157.17

*price indicative

Packaging Options:
RS stock no.:
257-9440
Mfr. Part No.:
IRFS7540TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.1mΩ

Maximum Power Dissipation Pd

160W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

88nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a Lead Free D2 Pak package.

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered

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