Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-252

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Subtotal (1 reel of 2000 units)*

R 18 248,00

(exc. VAT)

R 20 986,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 9.124R 18,248.00
4000 +R 8.896R 17,792.00

*price indicative

RS stock no.:
257-5550
Mfr. Part No.:
IRFR7540TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

86nC

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt capability

Lead-free, RoHS compliant

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