Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP
- RS stock no.:
- 257-9428
- Mfr. Part No.:
- IRFS38N20DTRLP
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 107,07
(exc. VAT)
R 123,13
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 53.535 | R 107.07 |
| 10 - 48 | R 52.195 | R 104.39 |
| 50 - 98 | R 50.63 | R 101.26 |
| 100 - 248 | R 48.605 | R 97.21 |
| 250 + | R 46.66 | R 93.32 |
*price indicative
- RS stock no.:
- 257-9428
- Mfr. Part No.:
- IRFS38N20DTRLP
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRF3415PBF
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247 IRFP3415PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF
