Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263 IRFS38N20DTRLP

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Subtotal (1 pack of 2 units)*

R 110,09

(exc. VAT)

R 126,604

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 55.045R 110.09
10 - 48R 53.67R 107.34
50 - 98R 52.06R 104.12
100 - 248R 49.98R 99.96
250 +R 47.98R 95.96

*price indicative

Packaging Options:
RS stock no.:
257-9428
Mfr. Part No.:
IRFS38N20DTRLP
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

54mΩ

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

60nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

320W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered


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