Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

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Subtotal (1 pack of 2 units)*

R 129,01

(exc. VAT)

R 148,362

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 64.505R 129.01
10 - 48R 62.89R 125.78
50 - 98R 61.005R 122.01
100 - 248R 58.565R 117.13
250 +R 56.22R 112.44

*price indicative

Packaging Options:
RS stock no.:
257-9431
Mfr. Part No.:
IRFS4227TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

26mΩ

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET power mosfet PDP Switch in a D2 Pak package.

Advanced process technology

Key parameters optimized for PDP sustain, energy recovery and pass switch applications

Low E pulse rating to reduce power

Dissipation in PDP sustain, energy recovery and pass switch applications

Low QG for fast response

High repetitive peak current capability for

Reliable operation

Short fall & rise times for fast switching

175°C operating junction temperature for improved ruggedness

Repetitive avalanche capability for robustness and reliability

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