Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

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Subtotal (1 pack of 2 units)*

R 132,65

(exc. VAT)

R 152,548

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 66.325R 132.65
10 - 48R 64.665R 129.33
50 - 98R 62.725R 125.45
100 - 248R 60.215R 120.43
250 +R 57.805R 115.61

*price indicative

Packaging Options:
RS stock no.:
257-9431
Mfr. Part No.:
IRFS4227TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

26mΩ

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

330W

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET power mosfet PDP Switch in a D2 Pak package.

Advanced process technology

Key parameters optimized for PDP sustain, energy recovery and pass switch applications

Low E pulse rating to reduce power

Dissipation in PDP sustain, energy recovery and pass switch applications

Low QG for fast response

High repetitive peak current capability for

Reliable operation

Short fall & rise times for fast switching

175°C operating junction temperature for improved ruggedness

Repetitive avalanche capability for robustness and reliability

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