Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF
- RS stock no.:
- 257-9331
- Mfr. Part No.:
- IRF9358TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 128,46
(exc. VAT)
R 147,73
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 705 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 25.692 | R 128.46 |
| 50 - 95 | R 25.05 | R 125.25 |
| 100 - 495 | R 24.298 | R 121.49 |
| 500 - 1995 | R 23.326 | R 116.63 |
| 2000 + | R 22.392 | R 111.96 |
*price indicative
- RS stock no.:
- 257-9331
- Mfr. Part No.:
- IRF9358TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate drive voltage (called Logic level)
Capable of being driven at 2.5V gate drive voltage (called super logic level)
Reduced design complexity in high side configuration
Easier interface to microcontroller
Related links
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