Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

R 47 920,00

(exc. VAT)

R 55 120,00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +R 11.98R 47,920.00

*price indicative

RS stock no.:
257-9304
Mfr. Part No.:
IRF7328TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-8A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

32mΩ

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

52nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

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