Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 30 V SO-8 IRF7313TRPBF

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Subtotal (1 pack of 10 units)*

R 41,70

(exc. VAT)

R 48,00

(inc. VAT)

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  • 1,400 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 4.17R 41.70
50 - 90R 4.066R 40.66
100 - 490R 3.944R 39.44
500 - 1990R 3.786R 37.86
2000 +R 3.635R 36.35

*price indicative

Packaging Options:
RS stock no.:
257-9301
Mfr. Part No.:
IRF7313TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SO-8

Maximum Drain Source Resistance Rds

46mΩ

Typical Gate Charge Qg @ Vgs

22nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.78V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 30V dual n channel HEXFET power mosfet in a SO 8 package.

RoHS compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Dual n channel mosfet

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