N-Channel MOSFET, 8.2 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS8342TRPBF
- RS stock no.:
- 827-4127
- Mfr. Part No.:
- IRFTS8342TRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)**
R 91 80
(exc. VAT)
R 105 55
(inc. VAT)
4750 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
50 - 50 | R 1,836 | R 91,80 |
100 - 450 | R 1,79 | R 89,50 |
500 - 1450 | R 1,736 | R 86,80 |
1500 - 2950 | R 1,667 | R 83,35 |
3000 + | R 1,60 | R 80,00 |
**price indicative
- RS stock no.:
- 827-4127
- Mfr. Part No.:
- IRFTS8342TRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.2 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | TSOP-6 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 29 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.35V | |
Minimum Gate Threshold Voltage | 1.35V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V | |
Width | 1.75mm | |
Length | 3mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.3mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V | ||
Width 1.75mm | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.3mm | ||
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