Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6346TRPBF
- RS stock no.:
- 737-7234
- Distrelec Article No.:
- 304-45-319
- Mfr. Part No.:
- IRLML6346TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 68,94
(exc. VAT)
R 79,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 120 unit(s) ready to ship from another location
- Plus 40 unit(s) shipping from 17 April 2026
- Plus 6,000 unit(s) shipping from 15 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 3.447 | R 68.94 |
| 40 - 80 | R 3.361 | R 67.22 |
| 100 - 180 | R 3.26 | R 65.20 |
| 200 - 380 | R 3.129 | R 62.58 |
| 400 + | R 3.004 | R 60.08 |
*price indicative
- RS stock no.:
- 737-7234
- Distrelec Article No.:
- 304-45-319
- Mfr. Part No.:
- IRLML6346TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
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- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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