Infineon HEXFET Type N-Channel MOSFET, 0.9 A, 150 V, 6-Pin TSOP-6 IRF5802TRPBF
- RS stock no.:
- 257-9290
- Mfr. Part No.:
- IRF5802TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 10 units)*
R 44,59
(exc. VAT)
R 51,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,960 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 4.459 | R 44.59 |
| 50 - 90 | R 4.348 | R 43.48 |
| 100 - 240 | R 4.218 | R 42.18 |
| 250 - 990 | R 4.049 | R 40.49 |
| 1000 + | R 3.887 | R 38.87 |
*price indicative
- RS stock no.:
- 257-9290
- Mfr. Part No.:
- IRF5802TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Related links
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