Infineon HEXFET Type N-Channel MOSFET, -3.4 A, -40 V, 6-Pin TSOP-6 IRF5803TRPBF
- RS stock no.:
- 257-9292
- Mfr. Part No.:
- IRF5803TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 83,57
(exc. VAT)
R 96,11
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 510 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 8.357 | R 83.57 |
| 50 - 90 | R 8.148 | R 81.48 |
| 100 - 240 | R 7.904 | R 79.04 |
| 250 - 990 | R 7.588 | R 75.88 |
| 1000 + | R 7.284 | R 72.84 |
*price indicative
- RS stock no.:
- 257-9292
- Mfr. Part No.:
- IRF5803TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -3.4A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | HEXFET | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -3.4A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series HEXFET | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -40V single p channel power mosfet in a TSOP 6 (Micro 6) package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
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