Infineon HEXFET Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PQFN IRFH5006TRPBF
- RS stock no.:
- 130-0973
- Mfr. Part No.:
- IRFH5006TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 232,65
(exc. VAT)
R 267,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 10 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 46.53 | R 232.65 |
| 50 - 95 | R 45.366 | R 226.83 |
| 100 - 495 | R 44.006 | R 220.03 |
| 500 - 995 | R 42.246 | R 211.23 |
| 1000 + | R 40.556 | R 202.78 |
*price indicative
- RS stock no.:
- 130-0973
- Mfr. Part No.:
- IRFH5006TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Length 6mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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