Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 209,17

(exc. VAT)

R 240,55

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 3,870 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 10R 20.917R 209.17
20 - 90R 20.394R 203.94
100 - 240R 19.782R 197.82
250 - 490R 18.991R 189.91
500 +R 18.231R 182.31

*price indicative

Packaging Options:
RS stock no.:
220-7484
Mfr. Part No.:
IRFH5300TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.6W

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

4.75 mm

Height

0.9mm

Length

6mm

Automotive Standard

No

The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Related links