Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V TO-262 IRFS4127TRLPBF

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Subtotal (1 pack of 2 units)*

R 128,70

(exc. VAT)

R 148,00

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 64.35R 128.70
10 - 48R 62.74R 125.48
50 - 98R 60.86R 121.72
100 - 248R 58.425R 116.85
250 +R 56.09R 112.18

*price indicative

Packaging Options:
RS stock no.:
257-5836
Mfr. Part No.:
IRFS4127TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-262

Mount Type

Surface

Maximum Drain Source Resistance Rds

18.6mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

100nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

High efficiency synchronous rectification in SMPS

Uninterruptible power supply

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