Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V TO-262 IRFS4127TRLPBF
- RS stock no.:
- 257-5836
- Mfr. Part No.:
- IRFS4127TRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 122,41
(exc. VAT)
R 140,772
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 61.205 | R 122.41 |
| 10 - 48 | R 59.675 | R 119.35 |
| 50 - 98 | R 57.885 | R 115.77 |
| 100 - 248 | R 55.57 | R 111.14 |
| 250 + | R 53.345 | R 106.69 |
*price indicative
- RS stock no.:
- 257-5836
- Mfr. Part No.:
- IRFS4127TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
Related links
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