Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- RS stock no.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 112,88
(exc. VAT)
R 129,81
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 979 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 112.88 |
| 10 - 24 | R 110.06 |
| 25 - 99 | R 106.76 |
| 100 - 499 | R 102.49 |
| 500 + | R 98.39 |
*price indicative
- RS stock no.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHB24N65E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in electronic and industrial systems. It operates across a broad temperature range and is supplied in a surface-mount TO-263 package suitable for integration onto populated assemblies where elevated voltage handling is required.
Features and Benefits:
• 650V maximum drain-source voltage enabling high-voltage switching
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin
Applications
• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers
What thermal limits should I consider for heavy-duty operation?
The device is rated to operate up to +150°C junction temperature and down to -55°C, so thermal management such as appropriate heatsinking or PCB copper area is required to maintain safe junction temperatures at high power dissipation.
How does the gate charge affect drive circuitry selection?
With a typical gate charge of 122nC at the specified gate voltage, drive circuits must source and sink sufficient current to achieve the required switching speed while considering switching losses and driver power capability.
What mounting considerations are needed for assembly reliability?
It is provided in a TO-263 surface-mount package with three pins, so standard reflow soldering processes and correct pad design should be used to ensure mechanical and thermal connection.
Which environmental or regulatory attribute is included?
The component conforms to RoHS requirements, indicating it meets the specified restrictions on hazardous substances.
Related links
- Vishay Type N-Channel MOSFET 650 V TO-263
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay Type N-Channel MOSFET 600 V TO-263 SIHB15N60E-GE3
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3