Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

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Subtotal (1 reel of 2000 units)*

R 102 660,00

(exc. VAT)

R 118 060,00

(inc. VAT)

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Per Reel*
2000 +R 51.33R 102,660.00

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RS stock no.:
268-8308
Mfr. Part No.:
SIHK105N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

142W

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies, and telecom power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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