onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F
- RS stock no.:
- 195-2518
- Mfr. Part No.:
- NVB150N65S3F
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 290,09
(exc. VAT)
R 333,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 550 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 29.009 | R 290.09 |
| 100 - 190 | R 28.284 | R 282.84 |
| 200 - 390 | R 27.435 | R 274.35 |
| 400 - 590 | R 26.338 | R 263.38 |
| 600 + | R 25.284 | R 252.84 |
*price indicative
- RS stock no.:
- 195-2518
- Mfr. Part No.:
- NVB150N65S3F
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 192W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 192W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Typ. RDS(on) = 114 m
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)
These Devices are Pb−Free
Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Related links
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 NTP150N65S3HF
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- onsemi NTHL125N Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL125N65S3H
- onsemi NTHL125N Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi NTP125N Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220