onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

RS stock no.:: 195-2518
Mfr. Part No.:: NVB150N65S3F
Manufacturer:: onsemi

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 297,13

(exc. VAT)

R 341,70

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 550 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 90	R 29.713	R 297.13
100 - 190	R 28.97	R 289.70
200 - 390	R 28.101	R 281.01
400 - 590	R 26.977	R 269.77
600 +	R 25.898	R 258.98

*price indicative

RS stock no.:: 195-2518
Mfr. Part No.:: NVB150N65S3F
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	192W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	4.58mm
	Length	10.67mm
	Width	9.65 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 192W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 4.58mm
	Length 10.67mm
	Width 9.65 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVB150N65S3F

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Typ. RDS(on) = 114 m

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF)

These Devices are Pb−Free

Applications

Automotive On Board Charger

Automotive DC/DC Converter for HEV

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 NVB150N65S3F

FREE delivery for orders over R 1,500.00

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