Vishay Type N-Channel MOSFET, 6 A, 30 V, 8-Pin ChipFET SI5468DC-T1-GE3
- RS stock no.:
- 256-7369
- Mfr. Part No.:
- SI5468DC-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 121,65
(exc. VAT)
R 139,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,000 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.866 | R 121.65 |
| 50 - 75 | R 4.744 | R 118.60 |
| 100 - 225 | R 4.602 | R 115.05 |
| 250 - 975 | R 4.418 | R 110.45 |
| 1000 + | R 4.241 | R 106.03 |
*price indicative
- RS stock no.:
- 256-7369
- Mfr. Part No.:
- SI5468DC-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | ChipFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type ChipFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Vishay Semiconductor N-Ch 1206-8 chipFET 30v halogen-free according to IEC 61249-2-21 definition and its application are system power, load switch, low current DC, DC.
TrenchFET power mosfet
100 % Rg tested
Pulse test pulse width ≤ 300 μs, duty cycle ≤ 2 %
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