Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

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Subtotal (1 pack of 25 units)*

R 228,175

(exc. VAT)

R 262,40

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25R 9.127R 228.18
50 - 75R 8.899R 222.48
100 - 225R 8.632R 215.80
250 - 975R 8.287R 207.18
1000 +R 7.955R 198.88

*price indicative

Packaging Options:
RS stock no.:
256-7347
Mfr. Part No.:
SI2329DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-6A

Maximum Drain Source Voltage Vds

-8V

Package Type

SOT-23

Series

Si2329DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.12Ω

Maximum Gate Source Voltage Vgs

5 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

19.3nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.12mm

Standards/Approvals

IEC 61249-2-21, RoHS

Width

1.4 mm

Automotive Standard

No

The Vishay Semiconductor P-channel 8 V 6A (Tc) 2.5W (Tc) surface mount SOT-23-3 (TO-236) halogen-free according to IEC 61249-2-21 definition.

TrenchFET power mosfet

100 % Rg tested

Compliant to RoHS directive 2002/95/EC

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