Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

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Subtotal (1 pack of 25 units)*

R 221,90

(exc. VAT)

R 255,175

(inc. VAT)

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  • 1,900 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
25 - 25R 8.876R 221.90
50 - 75R 8.654R 216.35
100 - 225R 8.394R 209.85
250 - 975R 8.059R 201.48
1000 +R 7.736R 193.40

*price indicative

Packaging Options:
RS stock no.:
256-7347
Mfr. Part No.:
SI2329DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-6A

Maximum Drain Source Voltage Vds

-8V

Series

Si2329DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.12Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.3nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

5 V

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

IEC 61249-2-21, RoHS

Length

3.04mm

Width

1.4 mm

Automotive Standard

No

The Vishay Semiconductor P-channel 8 V 6A (Tc) 2.5W (Tc) surface mount SOT-23-3 (TO-236) halogen-free according to IEC 61249-2-21 definition.

TrenchFET power mosfet

100 % Rg tested

Compliant to RoHS directive 2002/95/EC

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