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onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1

RS stock no.:: 254-7672
Mfr. Part No.:: NTH4L075N065SC1
Manufacturer:: onsemi

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1

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Subtotal (1 unit)*

R 161,86

(exc. VAT)

R 186,14

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 04 May 2026

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Units	Per unit
1 - 9	R 161.86
10 - 99	R 157.81
100 - 249	R 153.08
250 - 349	R 146.96
350 +	R 141.08

*price indicative

RS stock no.:: 254-7672
Mfr. Part No.:: NTH4L075N065SC1
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Series	NTH
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	61nC
	Forward Voltage Vf	4.5V
	Maximum Power Dissipation Pd	117W
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free 2LI, RoHS with exemption 7a
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Series NTH
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 61nC
	Forward Voltage Vf 4.5V
	Maximum Power Dissipation Pd 117W
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free 2LI, RoHS with exemption 7a
	Automotive Standard AEC-Q101

Datasheet - NTH4L075N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

High reliability at high temperature ambient

High speed switching and low capacitance

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L075N065SC1

FREE delivery for orders over R 1,500.00

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L

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