onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 248-5817
- Mfr. Part No.:
- NTHL025N065SC1
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 7 628,16
(exc. VAT)
R 8 772,39
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 330 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 254.272 | R 7,628.16 |
| 60 - 60 | R 247.915 | R 7,437.45 |
| 90 + | R 240.478 | R 7,214.34 |
*price indicative
- RS stock no.:
- 248-5817
- Mfr. Part No.:
- NTHL025N065SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 348 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra Low Gate Charge 164 nC
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
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