onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L040N120SC1
- RS stock no.:
- 202-5699
- Mfr. Part No.:
- NTH4L040N120SC1
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 768,45
(exc. VAT)
R 883,718
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 630 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 384.225 | R 768.45 |
| 50 - 98 | R 374.62 | R 749.24 |
| 100 - 198 | R 363.38 | R 726.76 |
| 200 + | R 348.845 | R 697.69 |
*price indicative
- RS stock no.:
- 202-5699
- Mfr. Part No.:
- NTH4L040N120SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 319W | |
| Forward Voltage Vf | 3.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 319W | ||
Forward Voltage Vf 3.7V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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