onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS stock no.:
- 202-5698
- Mfr. Part No.:
- NTH4L040N120SC1
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 tube of 450 units)*
R 114 534,90
(exc. VAT)
R 131 715,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 450 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | R 254.522 | R 114,534.90 |
*price indicative
- RS stock no.:
- 202-5698
- Mfr. Part No.:
- NTH4L040N120SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 319W | |
| Forward Voltage Vf | 3.7V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 319W | ||
Forward Voltage Vf 3.7V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Height 22.74mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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