Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS

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Subtotal (1 reel of 3000 units)*

R 77 010,00

(exc. VAT)

R 88 560,00

(inc. VAT)

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Units
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Per Reel*
3000 - 6000R 25.67R 77,010.00
9000 +R 25.028R 75,084.00

*price indicative

RS stock no.:
252-0296
Mfr. Part No.:
SIZF640DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

159A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAIR 6 x 5FS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00137Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Symmetric Dual N Channel

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

Symmetric dual N-channel

Flip chip technology optimal thermal design

High side and low side MOSFETs form optimized

Combination for 50 % duty cycle

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