Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- RS stock no.:
- 252-0295
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 227,24
(exc. VAT)
R 261,325
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,035 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 45.448 | R 227.24 |
| 50 - 95 | R 44.312 | R 221.56 |
| 100 - 245 | R 42.982 | R 214.91 |
| 250 - 995 | R 41.262 | R 206.31 |
| 1000 + | R 39.612 | R 198.06 |
*price indicative
- RS stock no.:
- 252-0295
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Dual N-Channel 30 V (D-S) MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Dual N-Channel 30 V (D-S) MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
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