Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 pack of 5 units)*

R 235,18

(exc. VAT)

R 270,455

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 47.036R 235.18
50 - 95R 45.86R 229.30
100 - 245R 44.484R 222.42
250 - 995R 42.704R 213.52
1000 +R 40.996R 204.98

*price indicative

Packaging Options:
RS stock no.:
228-2941
Mfr. Part No.:
SiZF906BDT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 6 x 5F

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

25nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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