Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 pack of 5 units)*

R 191,96

(exc. VAT)

R 220,755

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 38.392R 191.96
50 - 95R 37.432R 187.16
100 - 245R 36.31R 181.55
250 - 995R 34.858R 174.29
1000 +R 33.464R 167.32

*price indicative

Packaging Options:
RS stock no.:
228-2941
Mfr. Part No.:
SiZF906BDT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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