Vishay Symmetric Dual N Channel 2 N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS SIZF640DT-T1-GE3
- RS stock no.:
- 252-0298
- Mfr. Part No.:
- SIZF640DT-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 371,94
(exc. VAT)
R 427,73
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 74.388 | R 371.94 |
| 50 - 95 | R 72.528 | R 362.64 |
| 100 - 245 | R 70.352 | R 351.76 |
| 250 - 995 | R 67.538 | R 337.69 |
| 1000 + | R 64.836 | R 324.18 |
*price indicative
- RS stock no.:
- 252-0298
- Mfr. Part No.:
- SIZF640DT-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 159A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 6 x 5FS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00137Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Symmetric Dual N Channel | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 159A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 6 x 5FS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00137Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Symmetric Dual N Channel | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
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