ROHM R6535KNX3 Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 R6535KNX3C16
- RS stock no.:
- 249-1129
- Mfr. Part No.:
- R6535KNX3C16
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 80,31
(exc. VAT)
R 92,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 1 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | R 80.31 |
| 50 - 99 | R 78.30 |
| 100 - 249 | R 75.95 |
| 250 - 499 | R 72.91 |
| 500 + | R 69.99 |
*price indicative
- RS stock no.:
- 249-1129
- Mfr. Part No.:
- R6535KNX3C16
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | R6535KNX3 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series R6535KNX3 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM high-speed switching N channel 650 V, 35 A drain current power MOSFET are high-speed switching products, super junction MOSFETs, that place an emphasis on high efficiency, this series products achieve higher efficiency via high-speed switching, h
Low on-resistance
Ultra fast switching
Parallel use is easy
Pb-free plating
RoHs compliant
Related links
- ROHM N-Channel MOSFET 650 V, 3-Pin TO-220AB R6535KNX3C16
- Vishay E Series N-Channel MOSFET 650 V, 3-Pin TO-220AB SiHP080N60E-GE3
- Vishay Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP074N65E-GE3
- ROHM N-Channel MOSFET 650 V, 3-Pin TO-220AB R6515KNX3C16
- ROHM N-Channel MOSFET 650 V, 3-Pin TO-220AB R6520KNX3C16
- ROHM N-Channel MOSFET 650 V, 3-Pin TO-220AB R6524KNX3C16
- ROHM N-Channel MOSFET 650 V, 3-Pin TO-220AB R6530KNX3C16
- Infineon N-Channel MOSFET 650 V, 3-Pin D2PAK IPB60R060C7ATMA1