onsemi SiC Power Module, 1200 V F1-2PACK
- RS stock no.:
- 248-5823
- Mfr. Part No.:
- NXH010P120MNF1PTG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tray of 28 units)*
R 66 849,048
(exc. VAT)
R 76 876,408
(inc. VAT)
Add 28 units to get free delivery
Last RS stock
- Final 28 unit(s), ready to ship from another location
Units | Per unit | Per Tray* |
|---|---|---|
| 28 - 28 | R 2,387.466 | R 66,849.05 |
| 56 - 56 | R 2,327.779 | R 65,177.81 |
| 84 + | R 2,257.946 | R 63,222.49 |
*price indicative
- RS stock no.:
- 248-5823
- Mfr. Part No.:
- NXH010P120MNF1PTG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F1-2PACK | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Power Module | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F1-2PACK | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material
The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.
10 mohm/1200 V SiC MOSFET half bridge
Options with pre−applied thermal interface material and without pre−applied TIM
Press−fit pins
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